- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Patent holdings for IPC class H10D 84/83
Total number of patents in this class: 1477
10-year publication summary
|
0
|
0
|
0
|
2
|
11
|
75
|
248
|
218
|
591
|
291
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 47602 |
640 |
| Samsung Electronics Co., Ltd. | 154751 |
197 |
| Semiconductor Energy Laboratory Co., Ltd. | 11708 |
118 |
| Intel Corporation | 46718 |
87 |
| International Business Machines Corporation | 62295 |
69 |
| Rohm Co., Ltd. | 6772 |
16 |
| Sony Semiconductor Solutions Corporation | 11305 |
15 |
| United Microelectronics Corp. | 4456 |
13 |
| Qualcomm Incorporated | 90674 |
12 |
| Semiconductor Components Industries, L.L.C. | 5276 |
12 |
| Texas Instruments Incorporated | 19628 |
11 |
| Socionext Inc. | 1594 |
11 |
| Apple Inc. | 58208 |
10 |
| IBM United Kingdom Limited | 4093 |
10 |
| Adeia Semiconductor Solutions LLC | 759 |
10 |
| Micron Technology, Inc. | 27348 |
9 |
| Applied Materials, Inc. | 20112 |
8 |
| Renesas Electronics Corporation | 5859 |
7 |
| Infineon Technologies Austria AG | 2299 |
7 |
| Tokyo Electron Limited | 13577 |
7 |
| Other owners | 208 |