- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Patent holdings for IPC class H10D 84/83
Total number of patents in this class: 917
10-year publication summary
|
0
|
0
|
0
|
0
|
2
|
8
|
66
|
152
|
119
|
544
|
| 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46161 |
473 |
| Semiconductor Energy Laboratory Co., Ltd. | 11552 |
73 |
| Samsung Electronics Co., Ltd. | 149087 |
69 |
| Intel Corporation | 46460 |
49 |
| International Business Machines Corporation | 61721 |
35 |
| Rohm Co., Ltd. | 6560 |
13 |
| Socionext Inc. | 1574 |
10 |
| Sony Semiconductor Solutions Corporation | 10823 |
10 |
| Qualcomm Incorporated | 87585 |
9 |
| Semiconductor Components Industries, L.L.C. | 5297 |
8 |
| IBM United Kingdom Limited | 4220 |
8 |
| Adeia Semiconductor Solutions LLC | 292 |
8 |
| Semiconductor Manufacturing International (Shanghai) Corporation | 1750 |
7 |
| Micron Technology, Inc. | 26558 |
6 |
| United Microelectronics Corp. | 4307 |
6 |
| Semiconductor Manufacturing International (Beijing) Corporation | 1034 |
6 |
| IBM Israel-science and Technology Ltd | 162 |
5 |
| Tokyo Electron Limited | 13136 |
4 |
| Nanya Technology Corporation | 2660 |
4 |
| National Yang Ming Chiao Tung University | 343 |
4 |
| Other owners | 110 |