- All sections
- H - Electricity
- H10D - Inorganic electric semiconductor devices
- H10D 84/83 - Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups or , e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Patent holdings for IPC class H10D 84/83
Total number of patents in this class: 1182
10-year publication summary
|
0
|
0
|
0
|
2
|
9
|
69
|
213
|
166
|
584
|
105
|
| 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 |
Principal owners for this class
| Owner |
All patents
|
This class
|
|---|---|---|
| Taiwan Semiconductor Manufacturing Company, Ltd. | 46613 |
546 |
| Samsung Electronics Co., Ltd. | 151485 |
132 |
| Semiconductor Energy Laboratory Co., Ltd. | 11608 |
102 |
| Intel Corporation | 46569 |
69 |
| International Business Machines Corporation | 61929 |
53 |
| Rohm Co., Ltd. | 6678 |
13 |
| Sony Semiconductor Solutions Corporation | 11052 |
13 |
| Qualcomm Incorporated | 88827 |
11 |
| Socionext Inc. | 1583 |
10 |
| Micron Technology, Inc. | 27165 |
9 |
| IBM United Kingdom Limited | 4122 |
9 |
| Adeia Semiconductor Solutions LLC | 757 |
9 |
| Semiconductor Components Industries, L.L.C. | 5283 |
8 |
| Texas Instruments Incorporated | 19542 |
7 |
| United Microelectronics Corp. | 4394 |
7 |
| Semiconductor Manufacturing International (Shanghai) Corporation | 1745 |
7 |
| Applied Materials, Inc. | 19683 |
6 |
| Semiconductor Manufacturing International (Beijing) Corporation | 1034 |
6 |
| IBM Israel-science and Technology Ltd | 171 |
6 |
| Tokyo Electron Limited | 13380 |
5 |
| Other owners | 154 |